pnp 2N5322 ? 2n5323 comset semiconductors 1/3 the 2N5322 and 2n5323 are pnp transistors mounted in to-39 metal case . they are especially intended for high-voltage medium power applications in industrial and commercial equipements. compliance to rohs absolute maximum ratings symbol ratings value unit 2N5322 -75 v ceo collector-emitter voltage (i b = 0) 2n5323 -50 v 2N5322 -100 v cbo collector-base voltage (i e = 0) 2n5323 -75 v 2N5322 -100 v cev collector-emitter voltage (v be = 1.5v) 2n5323 -75 v 2N5322 -6 v ebo emitter-base voltage (i c = 0) 2n5323 -5 v 2N5322 i c collector current 2n5323 -2 a 2N5322 i b base current 2n5323 -1 a 2N5322 @ t amb = 25 2n5323 1 2N5322 p d total power dissipation @ t case = 25 2n5323 10 watts 2N5322 t j junction temperature 2n5323 -65 to +200 c 2N5322 t stg storage temperature range 2n5323 -65 to +200 c thermal characteristics symbol ratings value unit 2N5322 r thj-a thermal resistance, junction to ambient 2n5323 175 c/w 2N5322 r thj-c thermal resistance, junction to case 2n5323 17.5 c/w s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s
pnp 2N5322 ? 2n5323 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit v cb = -80 v, i e =0 2N5322 - - -0.5 i cbo collector cutoff current v cb = -60 v, i e =0 2n5323 - - -5 a v eb = -5 v, i c =0 2N5322 - -0.1 - i ebo emitter cutoff current v eb = -4 v, i c =0 2n5323 - -0.5 - a 2N5322 -75 - - v ceo collector emitter breakdown voltage i c = -10 ma, i b =0 2n5323 -50 - - v 2N5322 -100 - - v cev collector emitter breakdown voltage i c = -100 a v be = 1.5v 2n5323 -75 - - v 2N5322 -6 - - v ebo emitter base breakdown voltage i e = -100 a, i c =0 2n5323 -5 - - v 2N5322 30 - 130 i c = -500 ma v ce = -4 v 2n5323 40 - 250 h fe (1) dc current gain i c = -1 a v ce = -2 v 2N5322 10 - - - 2N5322 - - -0.7 v ce(sat) (1) collector-emitter saturation voltage i c = -500 ma, i b = -50 ma 2n5323 - - -1.2 v 2N5322 - - -1.1 v be (1) base-emitter voltage i c = -500 ma, v ce = -4 v 2n5323 - - -1.4 v 2N5322 f t transition frequency i c = -50 ma, v ce = -4 v f = 10 mhz 2n5323 50 - - mhz 2N5322 t on turn-on time i c = -500 ma, v cc = -30 v i b1 = -50 ma 2n5323 - - 100 ns 2N5322 t off turn-off time i c = 500 ma, v cc = 30 v i b1 = -i b2 = -50 ma 2n5323 - - 1000 ns (1) pulse conditions : tp < 300 s, =1%
pnp 2N5322 ? 2n5323 comset semiconductors 3/3 mechanical data case to-39 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice. dimensions (mm) min typ max a 12.7 - - b - - 0.49 d - - 6.6 e - - 8.5 f - - 9.4 g 5.08 - - h - - 1.2 i - - 0.9 l 45 - - pin 1 : emitter pin 2 : base case : collector
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